Negative magnetoresistance in silicon doped with manganese
نویسندگان
چکیده
Based on the developed low-temperature step-by-step diffusion of impurity manganese atoms, magnetic nanoclusters atoms were formed in crystal lattice silicon with controllable concentration, specified and reproducible electrophysical parameters. With help electron spin resonance, it was proved experimentally that are p-Si<B,Mn> consist four positively charged which situated nearest equivalent inter-nodes around negatively boron atom. study properties material obtained is shown such materials an anomalous Hall effect observed. Magnetoresistance at room temperature studied a giant negative magnetoresistance (NMR) Δρ/ρ~300 %, found, increasing concentration nanoclusters, NMR value essentially rate.
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ژورنال
عنوان ژورنال: E3S web of conferences
سال: 2023
ISSN: ['2555-0403', '2267-1242']
DOI: https://doi.org/10.1051/e3sconf/202340105094